Semiconductor device and manufacturing method thereof
US11908949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2022 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Dec 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6734
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.