Capacitor and a DRAM device including the same
US11910592B2 · kind B2 · utility
0Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2022 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Mar 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
Abstract
A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. The insert layer may be between ones of the plurality of zirconium oxide layers. The capacitor may have a high capacitance and low leakage currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.