Flopping-mode electric dipole spin resonance
US11910728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2020 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Aug 19, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods, devices, and systems are described for performing quantum operations. An example device at least one magnetic field source configured to supply an inhomogeneous magnetic field, at least one semiconducting layer, and one or more conducting layers configured to: define at least two quantum states in the at least one semiconducting layer, and cause, based on an oscillating electrical signal supplied by the one or more conducting layers, an electron to move back and forth between the at least two quantum states in the presence of the inhomogeneous magnetic field. The movement of the electron between the at least two quantum states may generate an oscillating magnetic field to drive a quantum transition between a spin-up state and spin-down state of the electron thereby implementing a qubit gate on a spin state of the electron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.