Etching compositions
US11912921B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2021 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Jun 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.