Processes for depositing silicon-containing films using halidosilane compounds and compositions
US11913112B2 · kind B2 · utility
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Key dates
| Filing date | Jan 27, 2022 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Jan 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32055
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.