Patent · US Active

Non-destructive gap metrology

US11913772B2 · kind B2 · utility

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19Claims
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Assignee

Inventors

Key dates

Filing dateMar 17, 2022
Grant dateFeb 27, 2024
Priority date
Expiry dateMar 17, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/20
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The present disclosure is directed to a metrology system having 3-dimensional sensors for thickness measurements of semiconductor elements, and methods for taking the thickness measurements. In an aspect, the 3-dimensional sensor may be a single or dual 3-dimensional profiler that may scan across the top and bottom surfaces of an element to obtain a thickness measurement. In another aspect, the method may be used to measure a gap between elements that have assembled together.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.