Wafer scanning apparatus and method for focused beam processing
US11915906B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Feb 2, 2023 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Feb 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/20228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of scanning a wafer includes placing the wafer over a substrate holder inside a processing chamber, where the wafer is placed at a first twist angle relative to a reference axis of a rotatable feedthrough of the processing chamber. The method further includes performing a first pass scan by exposing the wafer to an ion beam while driving two rotary drives disposed in a scanning chamber synchronously to generate a planar motion of the wafer from a rotational motion of the two rotary drives, where the wafer is oriented continuously at the first twist angle when performing the first pass scan.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.