Patent · US Active

Ceramic semiconductor device package with copper tungsten conductive layers

US11915986B2 · kind B2 · utility

0Cited by
3References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 28, 2022
Grant dateFeb 27, 2024
Priority date
Expiry dateFeb 28, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L23/36
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A described example includes: a ceramic package having a board side surface and an opposite top side surface; a heat slug mounted to the board side surface of the ceramic package, forming a bottom surface in a die cavity; leads mounted to conductive lands on the ceramic package; sidewall metallization extending from the conductive lands and covering a portion of one of the sides of the ceramic package; copper tungsten alloy conductor layers formed in the ceramic package and spaced by dielectric layers; bond fingers formed of a conductor layer and extending to the die cavity; a semiconductor device mounted over the heat slug, and having bond pads on a device side surface facing away from a surface of the heat slug; electrical connections between bond pads on the semiconductor device and the bond fingers; and a lid mounted to the top side surface of the ceramic package.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.