Bonding cavity structure and bonding method
US11916040B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Dec 4, 2019 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Feb 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a bonding cavity structure and a bonding method, the bonding cavity structure comprises an upper carrier and a lower carrier, a gas-flow forming mechanism, which comprises multiple open-close integrated arms, the integrated arms are provided with multiple nozzles facing to wafer bonding surfaces, and the nozzles are switched to gas nozzles or vacuum suction nozzles, a closed space is formed by all the integrated arms closed together with the carriers, all the nozzle located on a side of two wafers are set as the gas nozzles, which blow gas parallel to the wafer bonding surfaces, meanwhile, all the nozzles located on the other side of the two wafers are set as the vacuum suction nozzles, which suck the gas blown from the gas nozzle at corresponding position, a high-speed gas-flow is generated between the two wafers, so as to produce a low pressure of Bernoulli effect, the wafers are not only subjected to thrust forces from backsides, but tension forces between the bonding surfaces are also affected by uniform low pressure, which enhances force uniformity during bonding process, and reduces an impact of particles on the bonding surfaces in the closed s…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.