Driving substrate with a thin film transistor divided into multiple active blocks that are connected to each other by a bridge
US11916080B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Nov 9, 2022 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Nov 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/674
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A driving substrate is provided. The driving substrate includes a substrate and a thin film transistor disposed on the substrate. The thin film transistor includes a first metal layer, a second metal layer, and a semiconductor disposed between the first metal layer and the second metal layer. The thin film transistor is divided into a first active block and a second active block, the first active block and the second active block are separated by a first gap in a first direction, and the first active block and the second active block are connected by a first bridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.