P-type oxide semiconductor and method for manufacturing same
US11916103B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 18, 2022 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Jul 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.