Compound semiconductor device
US11916140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2021 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | May 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Provided is a compound semiconductor device. The compound semiconductor device according to embodiments of the inventive concept includes a first semiconductor layer having a fin extending in a first direction on a substrate, an upper gate electrode extending in a second direction perpendicular to the first direction on the first semiconductor layer, a second semiconductor layer disposed between a sidewall of the fin and the upper gate electrode, a dielectric layer disposed between a top surface of the fin and the upper gate electrode, and a lower gate structure connected to a bottom surface of the first semiconductor layer by passing through the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.