Optoelectronic device comprising a current spreading layer

US11916166B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Roland Enzmann · Regensburg, DE
• Christian Mueller · Wiesbaden, DE
• Stefan Barthel · Regensburg, DE
• Vanessa Eichinger · Wenzenbach, DE
• Marc Christian Nenstiel · Regensburg, DE
• Lorenzo Zini · Regensburg, DE

Key dates

• Filing date: May 8, 2019
• Grant date: Feb 27, 2024
• Expiry date: Dec 18, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0364
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An optoelectronic device may include an optoelectronic semiconductor chip that is configured to emit electromagnetic radiation. The chip may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and a plurality of electrical contact elements. The first current spreading layer may be arranged on a side of the second semiconductor layer facing away from the first semiconductor layer. The plurality of electrical contact elements may electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer may be electrically connected to the second semiconductor layer. The second current spreading layer may be arranged between the first current spreading layer and the second semiconductor layer where an insulating layer insulates a first electrical contact element and a second electrical contact element from the second current spreading layer.