Semiconductor and manufacturing method of the same
US11917815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2023 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Mar 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.