Display device including transistor with vias contacting active layer through etch stop layer, and method of manufacturing same
US11917878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2023 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Mar 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/8792
Abstract
A display device includes: a first active pattern on a light blocking pattern; a second active pattern at a same layer as that of the first active pattern; a first insulating pattern on the first active pattern; a second insulating pattern on the first active pattern, the second insulating pattern being spaced from the first insulating pattern, and having a first contact hole exposing the first active pattern; a first gate electrode on the first insulating pattern; a second gate electrode at a same layer as that of the first gate electrode, and overlapping with the second active pattern; a first etch stopper on the second insulating pattern, and having a second contact hole connected to the first contact hole; and a first electrode on the first etch stopper, the first electrode contacting the light blocking pattern and the first active pattern through the first and second contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.