Patent · US Active

Resistless patterning mask

US11923198B2 · kind B2 · utility

0Cited by

5References

13Claims

0Family size

Assignees

IMEC VZW · BE
Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

Mikhail Krishtab · Heverlee, BE
Silvia Armini · Leuven, BE

Key dates

Filing date	Apr 12, 2021
Grant date	Mar 5, 2024
Priority date	—
Expiry date	Dec 11, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/265
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In a first aspect, the present disclosure relates to a method for forming a patterning mask over a layer to be patterned, the method comprising: (a) providing a first layer over a substrate, the substrate comprising the layer to be patterned, the first layer being capable to bond with a monolayer comprising a compound comprising a functional group for bonding to the first layer and a removable organic group, (b) bonding the monolayer to the first layer, (c) exposing the monolayer to an energy beam, thereby forming a pattern comprising a first area comprising the compound with the removable organic group and a second area comprising the compound not having the removable organic group, and (d) selectively depositing an amorphous carbon layer on top of the first area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.