Methods for manufacturing an electronic device
US11923255B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2023 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Apr 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for manufacturing an electronic device are provided. A representative method includes providing a substrate. The substrate has an active layer, a first patterned metal layer passing through a passivation layer to electrically connected to the active layer, a second patterned metal layer passing through an insulating layer to electrically connected to the first patterned metal layer, and a metal layer under the second patterned metal layer. A part of the metal layer does not serve as a portion of a thin film transistor, and the part of the metal layer serves as a portion of a gate line. The method includes providing a carrier substrate supporting a plurality of elements, conducting a testing to the elements, transferring the elements from the carrier substrate to the second patterned metal layer of the substrate, and fixing the elements to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.