Semiconductor structure having air gaps and method for manufacturing the same
US11923306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Apr 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor structure includes forming a plurality of dummy structures spaced apart from each other, forming a plurality of dielectric spacers laterally covering the dummy structures to form a plurality of trenches defined by the dielectric spacers, filling a conductive material into the trenches to form electrically conductive features, selectively depositing a capping material on the electrically conductive features to form a capping layer, removing the dummy structures to form a plurality of recesses defined by the dielectric spacers, filling a sacrificial material into the recesses so as to form sacrificial features, depositing a sustaining layer on the sacrificial features, and removing the sacrificial features to form air gaps confined by the sustaining layer and the dielectric spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.