Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same
US11923365B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jul 28, 2021 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Apr 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.