Fin field-effect transistor and method of forming the same
US11923433B2 · kind B2 · utility
1Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2021 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Aug 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.