Ultra-thin phosphor layers partially filled with Si-based binders
US11923482B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2020 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Jan 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A light emitting device and method of forming a light emitting device are disclosed. The light emitting device includes a light emitting diode and a phosphor layer formed on the light emitting diode, the phosphor layer including a plurality of phosphor particles formed in a particle layer, the particle layer including interstices between the phosphor particles, and a matrix material disposed in a portion of the interstices. A plurality of cavities may be disposed in a remaining portion of the interstices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.