III-nitride power semiconductor based heterojunction device
US11923816B2 · kind B2 · utility
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Key dates
| Filing date | Jan 31, 2022 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Aug 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated circuit is provided which can sense the drain voltage of an active heterojunction transistor under different conditions and can adjust a driving signal of a gate terminal of the active heterojunction transistor in order to limit conduction losses and/or switching losses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.