Film bulk acoustic resonator and fabrication method thereof
US11923826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2021 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Sep 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a film bulk acoustic resonator and its fabrication method. The film bulk acoustic resonator includes a first substrate, a support layer bonded on the first substrate, a first cavity formed in the support layer, a piezoelectric stacked layer on the support layer, a first trench and a second trench which are formed in the piezoelectric stacked layer, a dielectric layer over the piezoelectric stacked layer, a second cavity formed in the dielectric layer, and a second substrate covering the second cavity, where the first trench is connected to the first cavity, and the second trench is connected to the second cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.