Patent · US Active

Gate driver device

US11923839B2 · kind B2 · utility

0Cited by

2References

18Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Dirk Priefert · Moers, DE
Matteo Albertini · Pavia, IT
Remigiusz Viktor Boguszewicz · Essen, DE

Key dates

Filing date	Jul 27, 2022
Grant date	Mar 5, 2024
Priority date	—
Expiry date	Jul 27, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH03K2217/0018
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A gate driver device includes a first field effect transistor and a first driver circuit. The first field effect transistor includes a first gate electrode and a first backgate structure. The first driver circuit supplies a first backgate drive signal to the first backgate structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.