Patent · US Active

Drive device and semiconductor module

US11923851B2 · kind B2 · utility

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20Claims
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Key dates

Filing dateJul 12, 2022
Grant dateMar 5, 2024
Priority date
Expiry dateJul 12, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K17/56
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a drive device includes a drive circuit configured to drive a semiconductor device. The semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to fourth semiconductor region. The first semiconductor region includes first to third partial regions. The first semiconductor region is between the first electrode and the second semiconductor region. The third semiconductor region is between the first and second semiconductor regions. The fourth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The first partial region is between the fourth semiconductor region and the third electrode. The second partial region is between the fourth semiconductor region and the fourth electrode. A part of the insulating member is provided between the semiconductor member and the third and fourth electrodes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.