Hybrid image sensors having optical and short-wave infrared pixels integrated therein
US11925040B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 26, 2022 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Apr 26, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
An image sensor pixel includes a substrate having a pixel electrode on a light receiving surface thereof, and a photoelectric conversion layer including a perovskite material, on the pixel electrode. A transparent electrode is provided on the photoelectric conversion layer, and a vertical electrode is provided, which is electrically connected to the pixel electrode and extends at least partially through the substrate. The photoelectric conversion layer includes a perovskite layer, a first blocking layer extending between the pixel electrode and the perovskite layer, and a second blocking layer extending between the transparent electrode and the perovskite layer. The perovskite material may have a material structure of ABX3, A2BX4, A3BX5, A4BX6, ABX4, or An−1BnX3n+1, where: n is a positive integer in a range from 2 to 6; A includes at least one material selected from a group consisting of Na, K, Rb, Cs and Fr; B includes at least one material selected from a divalent transition metal, a rare earth metal, an alkaline earth metal, Ga, In, Al, Sb, Bi, and Po; and X includes at least one material selected from Cl, Br, and I.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.