Method of fabricating a semiconductor device
US11929105B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2021 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Jul 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present application makes public a magnetic memory and a reading/writing method thereof, which magnetic memory comprises at least one cell layer, and the cell layer includes a plurality of parallel second wires that are disposed in a second plane, the first plane being parallel to the second plane, and projections of the second wires onto the first plane intercrossing the first wires; a plurality of storage elements that are disposed between the first plane and the second plane, the storage elements including magnetic tunnel junctions and bi-directional gating components connected in series along a direction perpendicular to the first plane, the magnetic tunnel junctions being connected to the first wires, the bi-directional gating components being connected to the second wires, and the bi-directional gating components being configured to be conductive upon application of a threshold voltage and/or a threshold current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.