Patent · US Active

Etching platinum-containing thin film using protective cap layer

US11929423B2 · kind B2 · utility

0Cited by

7References

24Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Sebastian Meier · Munich, DE
Helmut Rinck · Moosburg an der Isar, DE
Mike Mittelstaedt · Berglern, DE

Key dates

Filing date	Jun 15, 2021
Grant date	Mar 12, 2024
Priority date	—
Expiry date	Jun 15, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.