Detector material and preparation method thereof

US11929446B2 · kind B2 · utility

Assignee

• Changchun University of Science and Technology · CN

Inventors

• Qun Hao · Changchun, CN
• Zhipeng WEI · Shanghai, CN
• Jilong Tang · Changchun, CN
• Huimin Jia · Changchun, CN
• Lei Liao · Stanford, US
• Kexue Li · Changchun, CN
• Fengyuan Lin · Changchun, CN
• Rui-Yu Chen · Taoyuan, TW
• Shichen Su · 流花街道, CN
• Shuangpeng Wang · Changchun, CN

Key dates

• Filing date: Nov 8, 2022
• Grant date: Mar 12, 2024
• Expiry date: Nov 8, 2042

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions.