High-voltage semiconductor switch
US11929743B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 7, 2022 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Jul 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0054
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high-voltage semiconductor switch is provided. The high-voltage semiconductor switch comprises one or more switch subcircuits, wherein each switch subcircuit may comprise one or more FET circuits and voltage-shifting transistor. The high-voltage semiconductor switch may be configured based on operational and environmental requirements, such as those of a quantum computing system, wherein the high-voltage switch may be located in a cryostat or vacuum chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.