Color and infrared image sensor
US11930255B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2020 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Sep 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.