Semiconductor structure and storage circuit
US11930644B2 · kind B2 · utility
0Cited by
10References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 3, 2021 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Aug 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor structure and a storage circuit that implements the storage structure of a magnetoresistive random access memory (MRAM) based on a dynamic random access memory (DRAM) fabrication platform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.