Transparent top electrode composite film for organic optoelectronic devices and its preparation method

US11930649B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Deen Gu · Sichuan, CN
• Xin Zhou · Shanghai, CN
• Yadong Jiang · Sichuan, CN
• Mengru Chen · Sichuan, CN

Key dates

• Filing date: Dec 30, 2021
• Grant date: Mar 12, 2024
• Expiry date: Jun 5, 2042

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

A transparent top electrode composite film for organic optoelectronic devices includes a substrate, an MoOx film layer coated on the substrate, a doped Ag-based film layer coated on the MoOx film layer and an HfOx film layer coated on the doped Ag-based film layer. A preparation method of the transparent top electrode composite film, which is achieved under vacuum and low temperature, includes steps of (A) depositing an MoOx film layer on a substrate through thermal evaporation process or electron beam evaporation process without heating the substrate; (B) depositing a doped Ag-based film layer on the MoOx film layer through sputtering process or evaporation process; and (C) depositing an HfOx film layer on the doped Ag-based film layer through reactive sputtering process, thereby obtaining the transparent top electrode composite film. The composite film is able to be used as a top electrode material for organic optoelectronic devices.