Reflective mask blank for EUV lithography and substrate with conductive film
US11934093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2023 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Jul 7, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.