Patent · US Active

Sub-threshold addressing and erasing in a magneto-electrophoretic writing medium

US11934593B2 · kind B2 · utility

0Cited by
62References
20Claims
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Key dates

Filing dateFeb 21, 2023
Grant dateMar 19, 2024
Priority date
Expiry dateFeb 21, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F3/0383
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A magneto-electrophoretic medium that can be globally and locally addressed and erased. The medium provides a writeable display with no perceivable lag and the ability to write and erase with only minimal power requirements. In particular, the magneto-electrophoretic medium can be erased by providing a subthreshold electric stimulus and supplementing a second non-electric stimulus that disturbs the written state and allows the magneto-electrophoretic particles to return to their original state.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.