Patent · US Active

Devices and methods for creating ohmic contacts using bismuth

US11935938B2 · kind B2 · utility

0Cited by
0References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 13, 2021
Grant dateMar 19, 2024
Priority date—
Expiry dateJun 28, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/256
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

Devices, such as transistors, that use bismuth to create ohmic contacts are provided, as are methods of manufacturing the same. The transistors, such as field-effect transistors, can include one or more two-dimensional materials, and electrical contact areas can be created on the two-dimensional material(s) using bismuth. The bismuth can help to provide energy-barrier free, ohmic contacts, and the resulting devices can have performance levels that rival or exceed state-of-the-art devices that utilize three-dimensional materials, like silicon. The two-dimensional materials can include transition metal dichalcogenides, such as molybdenum disulfide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.