Light emitting diode arrays with a light-emitting pixel area
US11935987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2022 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Oct 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.