Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

US11935989B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Fabian Kopp · Bukit Mertajam, MY
• Attila Molnar · Vadnais Heights, US
• Roland Enzmann · Regensburg, DE

Key dates

• Filing date: May 15, 2020
• Grant date: Mar 19, 2024
• Expiry date: Oct 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0364

Abstract

An optoelectronic semiconductor chip may include a first region doped with a first dopant, a second region doped with a second dopant, an active region between the first and second regions, a first contact layer having an electrically conductive material and covering the first region. An insulating layer may cover the first contact layer and include first openings, and the insulating layer may include a second contact layer having an electrically conductive material and covering the insulating layer and the first openings. The first openings may completely penetrate the insulating layer, and the second contact layer may include second openings and/or a third contact layer comprising an electrically conductive material is arranged in the first openings in each case between the second contact layer and the insulating layer.