Patent · US Active

Thin film saw device

US11936362B2 · kind B2 · utility

0Cited by

1References

6Claims

0Family size

Assignee

RF360 Singapore Pte. Ltd. · SG

Inventors

Ingo Bleyl · Munich, DE
Markus Hauser · Feldafing, DE
Matthias Knapp · Munich, DE

Key dates

Filing date	Nov 29, 2019
Grant date	Mar 19, 2024
Priority date	—
Expiry date	Oct 26, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH03H9/6489
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A thin film SAW device comprises a carrier substrate (CA), a TCF compensating layer (CL), a piezoelectric layer (PL), and an IDT electrode (EL) on top of the piezoelectric layer. A functional layer (FL) is arranged between piezoelectric layer and TCF compensating layer to further reduce the TCF. The material properties of the functional layer match those of the piezoelectric layer in view of acoustic velocity, density and stiffness such that they do not deviate from each other by more than 10% without having piezoelectric effect. The functional layer my be of the same crystalline constitution as the useful piezoelectric layer but without piezoelectric properties.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.