Organic field-effect transistor and fabrication method therefor

US11937438B2 · kind B2 · utility

Assignee

• Peking University Shenzhen Graduate School · CN

Inventors

• Hong Meng · Lo Wu, CN
• Yuhao Shi · Lo Wu, CN
• Xinwei Wang · Dunstable, US
• Lin Ai · Tangxia, CN

Key dates

• Filing date: Apr 17, 2020
• Grant date: Mar 19, 2024
• Expiry date: Oct 29, 2042

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

An organic field-effect transistor and a fabrication method therefor, including: providing a gate; depositing polymer material onto the gate to form a dielectric layer; performing supercritical fluids treatment on the gate having the dielectric layer deposited; depositing organic semiconductor layer material on the dielectric layer having been processed, to form an organic semiconductor layer; depositing electrode layer material on the organic semiconductor layer and forming an electrode layer. The dielectric properties of the dielectric layer after adopting the supercritical fluids treatment have been significantly improved. While the hysteresis effect of the dielectric layers in the OFET devices has been basically eliminated, the sub-threshold slope of the OFET is also significantly reduced, the carrier mobility is effectively improved. Additionally, an OFET switching rate after being processed is improved, and, by connecting the LEDs in series, the switching rate of the LED is increased.