Magnetoresistive inertial sensor chip
US11940299B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2020 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Aug 24, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/038
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This invention describes a magnetoresistive inertial sensor chip, comprising a substrate, a vibrating diaphragm, a magnetic field sensing magnetoresistor and at least one permanent magnet thin film. The vibrating diaphragm is located on one side surface of the substrate. The magnetic field sensing magnetoresistor and the permanent magnet thin film are set on the surface of the vibrating diaphragm displaced from the base of the substrate. A contact electrode is also arranged on the surface of the vibrating diaphragm away from the base of the substrate. The magnetic field sensing magnetoresistor is connected to the contact electrode through a lead. The substrate comprises a cavity formed through etching and either one or both of the magnetic field sensing magnetoresistors and the permanent magnet thin film are arranged in a vertical projection area of the cavity in the vibrating diaphragm portion. A magnetic field generated by the permanent magnet thin film changes in the sensing direction of the magnetic field sensing magnetoresistor of magnetoresistive inertial sensor chip, which changes the resistance valve of the magnetic field sensing magnetoresistor, thereby producing a change …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.