High-speed and low-voltage electro-optical modulator based on lithium niobate-silicon wafer
US11940707B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Sep 28, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high-speed and low-voltage electro-optical modulator based on a lithium niobate-silicon wafer. A silicon wafer is located above a lithium niobate wafer; a lithium niobate-silicon hybrid waveguide is formed by etching a silicon waveguide; and the power of light waves is differently distributed in the lithium niobate-silicon hybrid waveguide by changing the structure of the silicon waveguide. When higher power is distributed in the silicon waveguide, the high-speed and low-voltage electro-optical modulator is suitable for realizing a compact wave splitting function, a wave combining function and a thermo-optical modulation function; and when higher power is distributed in the lithium niobate waveguide, the high-speed and low-voltage electro-optical modulator is suitable for realizing a high-speed and low-voltage electro-optical modulation function. The present invention takes advantage of the lithium niobate and silicon material platforms respectively, and is suitable for high-speed and low-voltage electro-optical modulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.