Surface modification layer for conductive feature formation
US11942362B2 · kind B2 · utility
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5References
20Claims
0Family size
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Key dates
| Filing date | Mar 6, 2023 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Mar 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5329
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate generally to methods for forming a conductive feature in a dielectric layer in semiconductor processing and structures formed thereby. In some embodiments, a structure includes a dielectric layer over a substrate, a surface modification layer, and a conductive feature. The dielectric layer has a sidewall. The surface modification layer is along the sidewall, and the surface modification layer includes phosphorous and carbon. The conductive feature is along the surface modification layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.