Thin film based passive devices and methods of forming the same
US11942415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2022 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Aug 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/714
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device may include a substrate, and an interlevel dielectric arranged over the substrate. The interlevel dielectric may include a first interlevel dielectric layer in an interconnect level i, the first interlevel dielectric layer having a first interconnect and a second interconnect therein. A nitride block insulator may be arranged over the first interlevel dielectric layer and over the first interconnect and the second interconnect. An opening may be arranged in the nitride block insulator, the opening extending through the nitride block insulator to expose a surface of the first interconnect in the first interlevel dielectric layer. A contact plug may be arranged in the opening of the nitride block insulator. The contact plug at least lines the opening and prevents out-diffusion of conductive material from the first interconnect. A thin film of a passive component may be arranged over the nitride block insulator and over the contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.