Semiconductor device and power conversion device
US11942512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Aug 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A termination structure in which a semiconductor active region is surrounded with a guard ring and capable of preventing corrosion of a metal layer connected to the guard ring includes: an active region and a guard ring region surrounding the active region. A guard ring is formed on the semiconductor substrate, and an interlayer insulating film is formed on the semiconductor substrate so as to cover the guard ring. A field plate is disposed on the interlayer insulating film and is electrically connected to the guard ring via a contact penetrating the interlayer insulating film. A protective film covers the field plate, which has a laminated structure including a first metal in contact with the guard ring and a second metal which is disposed in contact with the first metal and has a lower standard potential than the first metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.