Semiconductor device
US11942539B2 · kind B2 · utility
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2References
15Claims
0Family size
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Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Feb 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a polycrystalline silicon part buried in a termination region of a silicon layer. The polycrystalline silicon part contacts the silicon layer, has a higher crystal grain density than the silicon layer, and includes a heavy metal. The silicon layer includes a drift layer located in a cell region and the termination region. The drift layer has a lower first-conductivity-type impurity concentration than a silicon substrate. The drift layer includes a same element of heavy metal as the heavy metal included in the polycrystalline silicon part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.