Semiconductor device and method for manufacturing the same
US11942540B2 · kind B2 · utility
0Cited by
18References
12Claims
0Family size
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Key dates
| Filing date | May 20, 2019 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | May 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having an LDMOS transistor can include: a first deep well region having a first doping type; a drift region located in the first deep well region and having a second doping type; and a drain region located in the drift region and having the second doping type, where the second doping type is opposite to the first doping type, and where a doping concentration peak of the first deep well region is located below the drift region to optimize the breakdown voltage and the on-resistance of the LDMOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.