Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
US11942566B2 · kind B2 · utility
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Key dates
| Filing date | Jun 14, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Oct 10, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
Abstract
A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.