Light-emitting diode device and method for manufacturing the same
US11942568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2020 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Oct 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A light-emitting diode device includes an epitaxial structure that contains first-type and second-type semiconductor units and an active layer interposed therebetween, a light transmittable dielectric element that is disposed on the first-type semiconductor unit opposite to the active layer and is formed with a first through hole, an adhesive layer that is disposed on the dielectric element and is formed with a second through hole corresponding in position to the first through hole, and a metal contact element that is disposed on the adhesive layer. The adhesive layer has a thickness of at most one fifth of that of the dielectric element. The metal contact element extends into the first and second through holes, and electrically contacts the first-type semiconductor unit. A method for manufacturing the LED device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.