Semiconductor device with transmissive layer and manufacturing method thereof
US11942581B2 · kind B2 · utility
0Cited by
243References
20Claims
0Family size
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Key dates
| Filing date | Sep 2, 2022 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Sep 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that that comprises a transparent, translucent, non-opaque, or otherwise optically-transmissive, external surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.